DBATU Model MCQ – Electronics Devices & Circuits Views: 323 [adinserter block="1"] Welcome to your Electronics Devices & Circuits, dated April 25, 2024 1. Which of the following elements are most frequently used for doping pure Ge or Si ?Deselect Answer Boron Gallium Indium All of the above 2. In which of the following state does the silicon diode has the voltage drop of 0.7V ?Deselect Answer No bias Reversed bias Forward bias Zener region 3. Find the static resistance of the diode having ID = 30 mA & VD = 0.75 VDeselect Answer 25 40 0.04 0.25 4. The below diagram is __________ Deselect Answer Half wave Rectifier Full wave Rectifier Bridge Rectifier None of these 5. _____ is a device in which there is a transfer of resistance from input side which is forward biased (low resistance) to output side which is reverse biased (high resistance)Deselect Answer Diode Transistor Regulator Rectifier 6. In which of the following region, both the collector base & base emitter junctions are forward biased ?Deselect Answer Active Cut-off Saturation All of the above 7. The decrease in base width with increase in collector reverse bias voltage is known as ____Deselect Answer Ohm's law Newton's law Early effect None of the above 8. A BJT is a _____ controlled device, JFET is a ________ controlled deviceDeselect Answer Voltage , voltage voltage , current current , voltage current , current 9. The symbols below comes under which category of MOSFET Deselect Answer N channel mosfet depletion type, p channel mosfet depletion type N channel mosfet enhancement type, p channel mosfet enhancement type N channel mosfet depletion type, p channel mosfet depletion type P channel mosfet depletion type, n channel mosfet depletion type 10. What is the value of the effective density of states function in the conduction band at 300k?Deselect Answer 3*1019 cm-3 0.4*10-19 cm-3 2.5*1019 cm-3 2.5*10-19 cm-3 Please fill in the comment box below. Name Email [adinserter block="1"]
